Design and Implementation of Low Noise Amplifier Using ATF54143 Transistor with Lumped-Element Impedance Matching for C-band Satellite Receiver

Abstract

The increasing demand for high performance C-band receiver front-ends requires Low Noise Amplifiers (LNAs) with high gain, low noise figure, and effective impedance matching. This paper presents the design, simulation and verification of a single-stage 4 GHz LNA using the ATF-54143 field-effect transistor (FET) in Advanced Design System (ADS) software. The input and output matching networks are designed using both the graphical Smith Chart and ADS Smith Chart Utility Auto Matching methods to achieve 50 Ω impedance matching. The optimized LNA achieves a forward gain (S21) of 14.87 dB, a noise figure of 1.48 dB, an input return loss (S11) of −37 dB, and an output return loss (S22) of −44 dB at 4 GHz. These results demonstrate that the proposed LNA provides high gain, low noise, and good impedance matching, making it suitable for C-band receiver front-end applications.